IPW60R190C6FKSA1 vs IPW60R037P7XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R190C6FKSA1 disebabkan oleh Infineon dan IPW60R037P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPW60R190C6FKSA1 IPW60R037P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 20.2 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on), max @ VGS=10V) 190 mΩ —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg, typ @ VDS=480V) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD, Tc=25°C) 151 W —
Suhu Hubungan Operasi -55 °C to +150 °C -55 °C to +150 °C
Thermal Resistance, Junction-to-Case (RθJC) 0.83 K/W —
Kemasan TO-247-3 (PG-TO247-3-1) PG-TO247-3 (TO-247-3, through-hole)
Jenis Pemasangan Through-Hole Through Hole
Kiraan Pin 3 (+ tab) —
Aras MSL N/A (through-hole) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — CoolMOS™ P7
Jenis Transistor — N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, Tc=25 °C) — 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) — 37 mΩ
Power Dissipation (P_D, Tc=25 °C) — 255 W
Gate Threshold Voltage (V_GS(th), typ) — 3.5 V
Orderable Part Number Suffix — XKSA1 (tube packaging, industrial)
Avalanche Rated — Yes

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