IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQDH29NE2LM5CGSCATMA1 dari Infineon dan IQDH88N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQDH29NE2LM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Paket | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Jumlah Pin | 9 | 9 (with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | Dual-side cooling capable |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Arus Alir Berlanjut (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Dissipasi Listrik (TC=25°C) | — | 333 W |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Rentang Suhu Kerja | — | -55°C to +175°C (TJ) |
| Polarity | — | N-Channel |
| Configuration | — | Single |