IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 比較
詳細並排比較 IQDH29NE2LM5CGSCATMA1 由 Infineon 與 IQDH88N06LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQDH29NE2LM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| 封裝 | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9-U02 (PQFN 5x6) |
| 腳位數 | 9 | 9 (with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | Dual-side cooling capable |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| 連續汲極電流 (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| 功率耗散 (TC=25°C) | — | 333 W |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| 工作溫度範圍 | — | -55°C to +175°C (TJ) |
| Polarity | — | N-Channel |
| Configuration | — | Single |