IQEH50NE2LM7ZCGATMA1 vs IQEH68NE2LM7UCGATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan IQEH68NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7ZCGATMA1 IQEH68NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C 175 °C
Rentang Suhu Kerja -55 degrees C to +175 degrees C -55 °C to +175 °C (typical for OptiMOS 7)
Paket PG-TTFN-9-3 PG-TTFN-9-3 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) OptiMOS 7 trench MOSFET
Status RoHS Compliant Compliant (per distributor listing)
Qualification Industrial grade per Infineon datasheet —
Series — OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) @ Ta — 47 A
Pulsed Drain Current (IDM) @ Tc — 338 A
Power Dissipation (PD) @ Ta — 2.5 W
Power Dissipation (PD) @ Tc — 130 W
Gate Threshold Voltage Type — Logic-level (per OptiMOS 7 family)
On-Resistance Family — RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Level MSL — [DATA_NEEDED: MSL Level]
Packaging — Tape & Reel (per ATMA1 suffix)

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