IQEH50NE2LM7ZCGATMA1 vs IQEH68NE2LM7UCGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan IQEH68NE2LM7UCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7ZCGATMA1 IQEH68NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C 175 °C
Gambaran Suhu Operasi -55 degrees C to +175 degrees C -55 °C to +175 °C (typical for OptiMOS 7)
Kemasan PG-TTFN-9-3 PG-TTFN-9-3 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) OptiMOS 7 trench MOSFET
Status RoHS Compliant Compliant (per distributor listing)
Qualification Industrial grade per Infineon datasheet —
Series — OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) @ Ta — 47 A
Pulsed Drain Current (IDM) @ Tc — 338 A
Power Dissipation (PD) @ Ta — 2.5 W
Power Dissipation (PD) @ Tc — 130 W
Gate Threshold Voltage Type — Logic-level (per OptiMOS 7 family)
On-Resistance Family — RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Aras MSL — [DATA_NEEDED: MSL Level]
Packaging — Tape & Reel (per ATMA1 suffix)

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