IQEH50NE2LM7ZCGATMA1 vs IQEH68NE2LM7UCGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQEH50NE2LM7ZCGATMA1 sa pamamagitan ng Infineon at IQEH68NE2LM7UCGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ NakahandaInfineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQEH50NE2LM7ZCGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | 175 °C |
| Hanay ng Temperature na Operasyon | -55 degrees C to +175 degrees C | -55 °C to +175 °C (typical for OptiMOS 7) |
| Packhaging | PG-TTFN-9-3 | PG-TTFN-9-3 (surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 trench MOSFET |
| Tindminan RoHS | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade per Infineon datasheet | — |
| Series | — | OptiMOS 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Level ng MSL | — | [DATA_NEEDED: MSL Level] |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |