IQEH54NE2LM7UCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQEH54NE2LM7UCGATMA1 dari Infineon dan IQEH46NE2LM7UCGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH54NE2LM7UCGATMA1 IQEH46NE2LM7UCGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Paket PG-TTFN-9-3 PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 2 V
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Rentang Suhu Kerja -55C to +150C (typical MOSFET range) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS 7 (trench)
Continuous Drain Current (ID) at TC — 440 A
Continuous Drain Current (ID) at TA — 57 A
Power Dissipation at TA — 2.5 W
Power Dissipation at TC — 150 W
Maximum On-Resistance (RDS(on)) — 0.46 mOhm
Polarity / Channel Type — Single N-Channel
Operating Mode — Enhancement-mode
Topology Suitability — Hard- and soft-switching

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