IQEH54NE2LM7UCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon dan IQEH46NE2LM7UCGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH54NE2LM7UCGATMA1 IQEH46NE2LM7UCGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Kemasan PG-TTFN-9-3 PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 2 V
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Gambaran Suhu Operasi -55C to +150C (typical MOSFET range) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Jenis Transistor — N-Channel MOSFET
Technology — OptiMOS 7 (trench)
Continuous Drain Current (ID) at TC — 440 A
Continuous Drain Current (ID) at TA — 57 A
Power Dissipation at TA — 2.5 W
Power Dissipation at TC — 150 W
Maximum On-Resistance (RDS(on)) — 0.46 mOhm
Polarity / Channel Type — Single N-Channel
Operating Mode — Enhancement-mode
Topology Suitability — Hard- and soft-switching

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