IR2011STRPBF vs IR2011SPBF Perbandingan

Perbandingan bersamaan detil IR2011STRPBF dari Infineon dan IR2011SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2011STRPBF IR2011SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side and Low-Side (Independent) High-Side and Low-Side, Inverting
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL —
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune Yes (on VS pin)
Suhu Kerja -40 C to +125 C —
Paket 8-SOIC (3.90 mm body width) 8-SOIC (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant Yes (PBF suffix)
Product Type — Half-Bridge Gate Driver IC
Jumlah Output — 2
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Propagation Delay (typ) — 80 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
Rentang Suhu Kerja — -40 C to +125 C
Tube / Reel Packaging — Tube (per Infineon PBF convention)

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