IR2011STRPBF vs IR2011SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2011STRPBF disebabkan oleh Infineon dan IR2011SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2011STRPBF IR2011SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side and Low-Side (Independent) High-Side and Low-Side, Inverting
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL —
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune Yes (on VS pin)
Suhu Operasi -40 C to +125 C —
Kemasan 8-SOIC (3.90 mm body width) 8-SOIC (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant Yes (PBF suffix)
Product Type — Half-Bridge Gate Driver IC
Bilangan Output — 2
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Propagation Delay (typ) — 80 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
Gambaran Suhu Operasi — -40 C to +125 C
Tube / Reel Packaging — Tube (per Infineon PBF convention)

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