IR2011STRPBF vs IR2011SPBF 对比

详细并排对比 IR2011STRPBF 出自 Infineon 和 IR2011SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR2011STRPBF IR2011SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $1.18
Configuration High-Side and Low-Side (Independent) High-Side and Low-Side, Inverting
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL —
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune Yes (on VS pin)
工作温度 -40 C to +125 C —
封装 8-SOIC (3.90 mm body width) 8-SOIC (DSO-8)
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant Yes (PBF suffix)
Product Type — Half-Bridge Gate Driver IC
输出数量 — 2
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Propagation Delay (typ) — 80 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
工作温度范围 — -40 C to +125 C
Tube / Reel Packaging — Tube (per Infineon PBF convention)

数据手册与资源

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