IR2104SPBF vs 2ED2103S06FXUMA1 Perbandingan
Perbandingan bersamaan detil IR2104SPBF dari Infineon dan 2ED2103S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IR2104SPBF | 2ED2103S06FXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Half-bridge gate driver | Half-Bridge Gate Driver |
| Number of Drivers | 2 (high-side + low-side) | 2 (high-side + low-side) |
| Configuration | High and Low Side | Non-Inverting |
| Input Type | Logic (non-inverting) | — |
| Maximum Offset / Bootstrap Supply Voltage | 600 V | — |
| Gate Drive Supply Range (VCC) | 10 V to 20 V | — |
| Output Source Current | 130 mA typical | — |
| Output Sink Current | 270 mA typical | — |
| Propagation Delay | 680 ns typical | — |
| Waktu naik | 160 ns typical | — |
| Waktu Menurun | 60 ns typical | — |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V CMOS/LSTTL | 3.3 V / 5 V |
| Undervoltage Lockout | Yes (VCC UVLO) | — |
| Deadtime | Internally set | — |
| Cross-Conduction Prevention | Yes | — |
| Rentang Suhu Kerja | -40 C to +125 C | -40C to +125C |
| Paket | 8-pin SOIC | PG-DSO-8-69 (DSO-8 with exposed pad) |
| Status RoHS | Compliant (PBF suffix indicates lead-free) | Compliant |
| Technology | — | High-Voltage Level Shift (SOI) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Bootstrap Voltage (Max) | — | 675 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Tipe Mounting | — | Surface Mount |
| Level MSL | — | [DATA_NEEDED: MSL level] |