IR2104SPBF vs 2ED2103S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2104SPBF disebabkan oleh Infineon dan 2ED2103S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2104SPBF 2ED2103S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-bridge gate driver Half-Bridge Gate Driver
Number of Drivers 2 (high-side + low-side) 2 (high-side + low-side)
Configuration High and Low Side Non-Inverting
Input Type Logic (non-inverting) —
Maximum Offset / Bootstrap Supply Voltage 600 V —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Output Source Current 130 mA typical —
Output Sink Current 270 mA typical —
Propagation Delay 680 ns typical —
Masa Pertambahan 160 ns typical —
Masa jatuh 60 ns typical —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V / 5 V
Undervoltage Lockout Yes (VCC UVLO) —
Deadtime Internally set —
Cross-Conduction Prevention Yes —
Gambaran Suhu Operasi -40 C to +125 C -40C to +125C
Kemasan 8-pin SOIC PG-DSO-8-69 (DSO-8 with exposed pad)
Status RoHS Compliant (PBF suffix indicates lead-free) Compliant
Technology — High-Voltage Level Shift (SOI)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Jenis Pemasangan — Surface Mount
Aras MSL — [DATA_NEEDED: MSL level]

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