IRF1010ESTRLPBF vs FQP50N06 Perbandingan
Perbandingan bersamaan detil IRF1010ESTRLPBF dari Infineon dan FQP50N06 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF1010ESTRLPBF | FQP50N06 |
|---|---|---|
| Merek | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | Planar Stripe DMOS |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | [DATA_NEEDED: Qg] |
| Operating Mode | Enhancement | — |
| Drive Voltage | 10 V (standard level) | — |
| Tipe Mounting | Surface Mount | Through Hole |
| Paket | D2PAK (TO-263) | TO-220-3 (through-hole) |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Part Number | — | FQP50N06 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at Tc | — | 120 W |
| On-Resistance Rds(on) max at VGS=10V | — | [DATA_NEEDED: Rds(on) max] |
| On-Resistance Rds(on) typical at VGS=10V | — | 0.022 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Rentang Suhu Kerja | — | -55C to +175C (junction) |
| Channel Mode | — | Enhancement |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |