IRF1010ESTRLPBF vs FQP50N06 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1010ESTRLPBF disebabkan oleh Infineon dan FQP50N06 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF1010ESTRLPBF FQP50N06
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET planar Planar Stripe DMOS
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ Tc 84 A —
Power Dissipation (Pd) @ Tc 200 W —
On-Resistance (RDS on) @ VGS=10V 12 mOhm —
Total Gate Charge (Qg) 86.6 nC [DATA_NEEDED: Qg]
Operating Mode Enhancement —
Drive Voltage 10 V (standard level) —
Jenis Pemasangan Surface Mount Through Hole
Kemasan D2PAK (TO-263) TO-220-3 (through-hole)
Qualification JEDEC standard qualified —
Structure Planar cell (wide SOA) —
Avalanche Testing 100% avalanche energy tested —
Sourcing Multi-vendor, broad distribution availability —
Pb-Free / RoHS PBF (Pb-free) suffix —
Manufacturer — onsemi (formerly Fairchild Semiconductor)
Part Number — FQP50N06
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at Tc — 120 W
On-Resistance Rds(on) max at VGS=10V — [DATA_NEEDED: Rds(on) max]
On-Resistance Rds(on) typical at VGS=10V — 0.022 ohm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Gambaran Suhu Operasi — -55C to +175C (junction)
Channel Mode — Enhancement
Status RoHS — Compliant
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga