IRF2805PBF vs IRF640NPBF Perbandingan
Perbandingan bersamaan detil IRF2805PBF dari Infineon dan IRF640NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF2805PBF | IRF640NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Number | IRF2805PBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET Power MOSFET (IR MOSFET) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc | 75 A | 18 A |
| Continuous Drain Current (ID) at 25°C | 175 A (pulsed / package-limited) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 150 nC | 44.7 nC |
| Power Dissipation (PD) at Tc | 330 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Paket | TO-220AB (3-pin, through-hole) | TO-220AB (through-hole, 3-pin) |
| Tipe Mounting | Through Hole | Through Hole |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Rentang Suhu Kerja | -55 °C to +175 °C | — |
| Configuration | Single N-Channel MOSFET | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Tipe Transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |