IRF2805PBF vs IRF640NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2805PBF disebabkan oleh Infineon dan IRF640NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF2805PBF | IRF640NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Number | IRF2805PBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET Power MOSFET (IR MOSFET) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc | 75 A | 18 A |
| Continuous Drain Current (ID) at 25°C | 175 A (pulsed / package-limited) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 150 nC | 44.7 nC |
| Power Dissipation (PD) at Tc | 330 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Kemasan | TO-220AB (3-pin, through-hole) | TO-220AB (through-hole, 3-pin) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Configuration | Single N-Channel MOSFET | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Jenis Transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |