IRF530NPBF vs IRF520NPBF Perbandingan
Perbandingan bersamaan detil IRF530NPBF dari Infineon dan IRF520NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF530NPBF | IRF520NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | IRF530NPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Tipe Transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Maximum Power Dissition (Pd) at Tc | 70 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket / Case | TO-220AB (through-hole) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Avalanche Rated | Yes | — |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Level MSL | N/A (through-hole) | 1 (unlimited) |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Paket | — | TO-220AB (through-hole) |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Technology | — | HEXFET (vertical DMOS) |