IRF530NPBF vs IRF520NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF530NPBF sa pamamagitan ng Infineon at IRF520NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF530NPBF IRF520NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Part Number IRF530NPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Uri ng Transistor N-Channel HEXFET Power MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 17 A —
Pulsed Drain Current (IDM) 60 A —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 90 mOhm (max, approximate per datasheet) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Maximum Power Dissition (Pd) at Tc 70 W —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging / Kaso TO-220AB (through-hole) —
Uri ng Pagpapasok Through Hole Through Hole
Avalanche Rated Yes —
Tindminan RoHS Compliant Compliant (Pb-free)
Level ng MSL N/A (through-hole) 1 (unlimited)
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
Series — HEXFET
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 100 V
Continuous Drain Current (I_D) at Tc — 9.7 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max — ±20 V
R_DS(on) max at V_GS=10V — 200 mOhm
Total Gate Charge (Q_g) — 16.7 nC
Power Dissipation (P_D) at Tc — 48 W
Hanay ng Temperature na Operasyon — -55C to +175C
Packhaging — TO-220AB (through-hole)
Lead-Free Finish — Yes (PBF suffix)
Technology — HEXFET (vertical DMOS)

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