IRF530NPBF vs IRF520NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF530NPBF tarafından Infineon ve IRF520NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF530NPBF | IRF520NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Part Number | IRF530NPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Transistor Türü | N-Channel HEXFET Power MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Maximum Power Dissition (Pd) at Tc | 70 W | — |
| İşletim Jant Sıcaklığı | -55 C to +175 C | — |
| Paket / Kas | TO-220AB (through-hole) | — |
| Montaj Türü | Through Hole | Through Hole |
| Avalanche Rated | Yes | — |
| RoHS Durumu | Compliant | Compliant (Pb-free) |
| MSL Seviyesi | N/A (through-hole) | 1 (unlimited) |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| İşletim Sıcaklığı Aralığı | — | -55C to +175C |
| Paket | — | TO-220AB (through-hole) |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Technology | — | HEXFET (vertical DMOS) |