IRF7342PBF vs IRF7389TRPBF Perbandingan

Perbandingan bersamaan detil IRF7342PBF dari Infineon dan IRF7389TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7342PBF IRF7389TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF —
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array HEXFET Generation V (IR MOSFET)
Configuration Dual P-Channel (2 independent MOSFETs) Dual N+P Complementary Half-Bridge
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Tipe Mounting Surface Mount Surface Mount
Paket / Case 8-SOIC (SO-8) —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
Status RoHS Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
Paket — 8-SO (SOIC-8)
Suhu Kerja — -55C to +150C
Avalanche Rated — Yes
Lead Free / RoHS — Lead Free / RoHS Compliant
Level MSL — 1

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