IRF7342PBF vs IRF7389TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7342PBF disebabkan oleh Infineon dan IRF7389TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7342PBF IRF7389TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF —
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array HEXFET Generation V (IR MOSFET)
Configuration Dual P-Channel (2 independent MOSFETs) Dual N+P Complementary Half-Bridge
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case 8-SOIC (SO-8) —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
Status RoHS Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
Kemasan — 8-SO (SOIC-8)
Suhu Operasi — -55C to +150C
Avalanche Rated — Yes
Lead Free / RoHS — Lead Free / RoHS Compliant
Aras MSL — 1

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