IRF7342PBF vs IRF7389TRPBF 比較

詳細並排比較 IRF7342PBF 由 Infineon 與 IRF7389TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7342PBF IRF7389TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF —
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array HEXFET Generation V (IR MOSFET)
Configuration Dual P-Channel (2 independent MOSFETs) Dual N+P Complementary Half-Bridge
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
安裝類型 Surface Mount Surface Mount
封裝 / 外殼 8-SOIC (SO-8) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
RoHS 狀態 Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
封裝 — 8-SO (SOIC-8)
工作溫度 — -55C to +150C
Avalanche Rated — Yes
Lead Free / RoHS — Lead Free / RoHS Compliant
MSL 等級 — 1

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