IRF7389TRPBF vs IRF7389PBF Perbandingan
Perbandingan bersamaan detil IRF7389TRPBF dari Infineon dan IRF7389PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7389TRPBF | IRF7389PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | N and P-Channel (complementary half-bridge) |
| Technology | HEXFET Generation V (IR MOSFET) | Generation V HEXFET |
| Paket | 8-SO (SOIC-8) | SO-8 (SOIC-8) surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C | — |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| Level MSL | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Drain-to-Source Voltage N-Ch (V_DSS) | — | 30 V |
| Drain-to-Source Voltage P-Ch (V_DSS) | — | -30 V |
| Continuous Drain Current N-Ch (I_D) | — | 7.3 A |
| Continuous Drain Current P-Ch (I_D) | — | -5.3 A |
| On-Resistance N-Ch R_DS(on) max | — | 0.029 ohm at V_GS=10V |
| On-Resistance P-Ch R_DS(on) max | — | 0.058 ohm at V_GS=10V |
| Total Gate Charge N-Ch (Q_g) typical | — | 22 nC |
| Total Gate Charge P-Ch (Q_g) typical | — | 23 nC |
| Power Dissipation (P_D) | — | 2.5 W |
| Pinout | — | Industry-standard complementary SO-8 |
| Rentang Suhu Kerja | — | [DATA_NEEDED: full operating temperature range] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |