IRF7389TRPBF vs IRF7389PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF7389TRPBF tarafından Infineon ve IRF7389PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF7389TRPBF | IRF7389PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | N and P-Channel (complementary half-bridge) |
| Technology | HEXFET Generation V (IR MOSFET) | Generation V HEXFET |
| Paket | 8-SO (SOIC-8) | SO-8 (SOIC-8) surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | -55C to +150C | — |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| MSL Seviyesi | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Drain-to-Source Voltage N-Ch (V_DSS) | — | 30 V |
| Drain-to-Source Voltage P-Ch (V_DSS) | — | -30 V |
| Continuous Drain Current N-Ch (I_D) | — | 7.3 A |
| Continuous Drain Current P-Ch (I_D) | — | -5.3 A |
| On-Resistance N-Ch R_DS(on) max | — | 0.029 ohm at V_GS=10V |
| On-Resistance P-Ch R_DS(on) max | — | 0.058 ohm at V_GS=10V |
| Total Gate Charge N-Ch (Q_g) typical | — | 22 nC |
| Total Gate Charge P-Ch (Q_g) typical | — | 23 nC |
| Power Dissipation (P_D) | — | 2.5 W |
| Pinout | — | Industry-standard complementary SO-8 |
| İşletim Sıcaklığı Aralığı | — | [DATA_NEEDED: full operating temperature range] |
| RoHS Durumu | — | Compliant |
| Lead-Free | — | Yes |
| Klorürsüz | — | Yes |