IRF7389TRPBF vs IRF7389PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7389TRPBF sa pamamagitan ng Infineon at IRF7389PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7389TRPBF IRF7389PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Transistor Polarity N and P Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (N-Ch, Id) 7.3 A —
Continuous Drain Current (P-Ch, Id) -5.3 A —
On-Resistance RDS(on) Max 29 mOhm —
Power Dissipation (Pd) 2.5 W —
Configuration Dual N+P Complementary Half-Bridge N and P-Channel (complementary half-bridge)
Technology HEXFET Generation V (IR MOSFET) Generation V HEXFET
Packhaging 8-SO (SOIC-8) SO-8 (SOIC-8) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C —
Avalanche Rated Yes Yes (fully avalanche rated)
Lead Free / RoHS Lead Free / RoHS Compliant —
Level ng MSL 1 —
Manufacturer Infineon (formerly International Rectifier) —
Drain-to-Source Voltage N-Ch (V_DSS) — 30 V
Drain-to-Source Voltage P-Ch (V_DSS) — -30 V
Continuous Drain Current N-Ch (I_D) — 7.3 A
Continuous Drain Current P-Ch (I_D) — -5.3 A
On-Resistance N-Ch R_DS(on) max — 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max — 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical — 22 nC
Total Gate Charge P-Ch (Q_g) typical — 23 nC
Power Dissipation (P_D) — 2.5 W
Pinout — Industry-standard complementary SO-8
Hanay ng Temperature na Operasyon — [DATA_NEEDED: full operating temperature range]
Tindminan RoHS — Compliant
Lead-Free — Yes
Wala sa Halogen — Yes

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