IRF7749L1TRPBF vs BSC0906NSATMA1 Perbandingan

Perbandingan bersamaan detil IRF7749L1TRPBF dari Infineon dan BSC0906NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7749L1TRPBF BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7749L1TRPBF —
FET Type N-Channel N-Channel
Technology HEXFET / IR MOSFET OptiMOS
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TA=25 C 33 A —
Pulsed Drain Current (IDM) at TC=25 C 200 A —
Gate-to-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.9 V [DATA_NEEDED: VGS(th) typ/min/max]
Drain-Source On-Resistance RDS(on) max 1.5 mOhm at VGS=10 V —
Drain-Source On-Resistance RDS(on) typ 1.1 mOhm at VGS=10 V —
Total Gate Charge (Qg) 200 nC max [DATA_NEEDED: Qg @ VGS=10V]
Gate-Drain Charge (Qgd) typ 71 nC —
Power Dissipation (Ptot) at TC=25 C 125 W —
Power Dissipation (Ptot) at TA=25 C 3.3 W —
Suhu Hubung Kerja -55 C to +175 C —
Thermal Resistance Junction-to-Ambient (RthJA) 45 K/W max —
Paket DirectFET Isometric L8 PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Tingkat Sensitivitas Kekeringan (MSL) 1 (per JEDEC J-STD-020) —
Polarity N-Channel —
Configuration Single —
Lead-Free / RoHS Yes / Compliant —
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Rentang Suhu Kerja — -55C to +150C (junction, typical)
Jumlah Pin — 8
Status RoHS — Compliant

Spek dan Sumber

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