IRF7749L1TRPBF vs BSC0906NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7749L1TRPBF sa pamamagitan ng Infineon at BSC0906NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF7749L1TRPBF IRF7749L1TRPBF - 60V N-Channel HEXFET MOSFET DirectFET L8

IRF7749L1TRPBF - 60V N-Channel HEXFET MOSFET DirectFET L8

IRF7749L1TRPBF ✓ Nakahanda
Infineon
BSC0906NSATMA1 BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF7749L1TRPBF BSC0906NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7749L1TRPBF —
FET Type N-Channel N-Channel
Technology HEXFET / IR MOSFET OptiMOS
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TA=25 C 33 A —
Pulsed Drain Current (IDM) at TC=25 C 200 A —
Gate-to-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.9 V [DATA_NEEDED: VGS(th) typ/min/max]
Drain-Source On-Resistance RDS(on) max 1.5 mOhm at VGS=10 V —
Drain-Source On-Resistance RDS(on) typ 1.1 mOhm at VGS=10 V —
Total Gate Charge (Qg) 200 nC max [DATA_NEEDED: Qg @ VGS=10V]
Gate-Drain Charge (Qgd) typ 71 nC —
Power Dissipation (Ptot) at TC=25 C 125 W —
Power Dissipation (Ptot) at TA=25 C 3.3 W —
Temperature ng Junction na Operasyon -55 C to +175 C —
Thermal Resistance Junction-to-Ambient (RthJA) 45 K/W max —
Packhaging DirectFET Isometric L8 PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng Sensitivity sa Asid ng Moisture (MSL) 1 (per JEDEC J-STD-020) —
Polarity N-Channel —
Configuration Single —
Lead-Free / RoHS Yes / Compliant —
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Hanay ng Temperature na Operasyon — -55C to +150C (junction, typical)
Bilang ng Pin — 8
Tindminan RoHS — Compliant

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