IRF8714TRPBF vs IRLL024NTRPBF Perbandingan
Perbandingan bersamaan detil IRF8714TRPBF dari Infineon dan IRLL024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF8714TRPBF | IRLL024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | MOSFET, Metal Oxide |
| Technology | HEXFET / StrongIRFET (planar MOSFET) | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 4.4 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | Logic Level (5 V drive capable) |
| Gate Charge (Qg) typical | 8.1 nC | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Paket | SO-8 (8-SOIC) | SOT-223 (4-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| Level MSL | 1 (per Infineon package qualification) | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Total Gate Charge (Qg) | — | 10.4 nC |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| Status RoHS | — | Compliant |