IRF8714TRPBF vs IRLL024NTRPBF 比較
詳細並排比較 IRF8714TRPBF 由 Infineon 與 IRLL024NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF8714TRPBF | IRLL024NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | MOSFET, Metal Oxide |
| Technology | HEXFET / StrongIRFET (planar MOSFET) | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 4.4 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | Logic Level (5 V drive capable) |
| Gate Charge (Qg) typical | 8.1 nC | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| 封裝 | SO-8 (8-SOIC) | SOT-223 (4-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL 等級 | 1 (per Infineon package qualification) | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Total Gate Charge (Qg) | — | 10.4 nC |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| RoHS 狀態 | — | Compliant |