IRF8714TRPBF vs IRLL024NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF8714TRPBF disebabkan oleh Infineon dan IRLL024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF8714TRPBF | IRLL024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | MOSFET, Metal Oxide |
| Technology | HEXFET / StrongIRFET (planar MOSFET) | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 4.4 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | Logic Level (5 V drive capable) |
| Gate Charge (Qg) typical | 8.1 nC | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Kemasan | SO-8 (8-SOIC) | SOT-223 (4-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| Aras MSL | 1 (per Infineon package qualification) | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Total Gate Charge (Qg) | — | 10.4 nC |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| Status RoHS | — | Compliant |