IRF8734TRPBF vs IRFH5015TRPBF Perbandingan
Perbandingan bersamaan detil IRF8734TRPBF dari Infineon dan IRFH5015TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF8734TRPBF | IRFH5015TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | StrongIRFET™ (HEXFET) | IR MOSFET (HEXFET) |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.5 mOhm | — |
| Gate Charge (Qg) typ | 20 nC | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Paket / Case | 8-SOIC (SO-8) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Avalanche Energy Rating | Fully characterized avalanche voltage | — |
| Status RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free / Halogen-Free | Lead-free (PBF suffix) | — |
| Level MSL | [DATA_NEEDED: MSL rating per J-STD-020] | — |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Paket | — | 8-PQFN (5x6) SuperSO8 |
| Configuration | — | Single with built-in body diode |
| Suhu Kerja | — | -55C to +150C (TJ max) |