IRF8734TRPBF vs IRFH5015TRPBF 比較

詳細並排比較 IRF8734TRPBF 由 Infineon 與 IRFH5015TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH5015TRPBF IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF ✓ 啟用中

規格比較

參數 IRF8734TRPBF IRFH5015TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology StrongIRFET™ (HEXFET) IR MOSFET (HEXFET)
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 150 V
Continuous Drain Current (ID) at Ta 21 A —
On-Resistance RDS(on) max at VGS=10V 3.5 mOhm —
Gate Charge (Qg) typ 20 nC —
Power Dissipation (PD) at Ta 2.5 W —
封裝 / 外殼 8-SOIC (SO-8) —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Avalanche Energy Rating Fully characterized avalanche voltage —
RoHS 狀態 Compliant (PBF suffix) Compliant
Lead-Free / Halogen-Free Lead-free (PBF suffix) —
MSL 等級 [DATA_NEEDED: MSL rating per J-STD-020] —
Packaging Tape & Reel (TR) —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 10 A
Continuous Drain Current (ID) at TC=25C — 56 A
On-Resistance (RDS(on)) max — 31 mOhm
Total Gate Charge (Qg) — 33 nC
Power Dissipation (TA=25C) — 3.6 W
Power Dissipation (TC=25C) — 156 W
Gate Drive Voltage (VGS recommended) — 10 V
封裝 — 8-PQFN (5x6) SuperSO8
Configuration — Single with built-in body diode
工作溫度 — -55C to +150C (TJ max)

資料表與資源

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