IRF8734TRPBF vs IRFH5015TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF8734TRPBF disebabkan oleh Infineon dan IRFH5015TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF8734TRPBF IRFH5015TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology StrongIRFET™ (HEXFET) IR MOSFET (HEXFET)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 150 V
Continuous Drain Current (ID) at Ta 21 A —
On-Resistance RDS(on) max at VGS=10V 3.5 mOhm —
Gate Charge (Qg) typ 20 nC —
Power Dissipation (PD) at Ta 2.5 W —
Kemasan / Case 8-SOIC (SO-8) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Avalanche Energy Rating Fully characterized avalanche voltage —
Status RoHS Compliant (PBF suffix) Compliant
Lead-Free / Halogen-Free Lead-free (PBF suffix) —
Aras MSL [DATA_NEEDED: MSL rating per J-STD-020] —
Packaging Tape & Reel (TR) —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 10 A
Continuous Drain Current (ID) at TC=25C — 56 A
On-Resistance (RDS(on)) max — 31 mOhm
Total Gate Charge (Qg) — 33 nC
Power Dissipation (TA=25C) — 3.6 W
Power Dissipation (TC=25C) — 156 W
Gate Drive Voltage (VGS recommended) — 10 V
Kemasan — 8-PQFN (5x6) SuperSO8
Configuration — Single with built-in body diode
Suhu Operasi — -55C to +150C (TJ max)

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