IRF9530NSTRLPBF vs IRF9530NPBF Perbandingan
Perbandingan bersamaan detil IRF9530NSTRLPBF dari Infineon dan IRF9530NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF9530NSTRLPBF | IRF9530NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V |
| Continuous Drain Current (ID) at TC=25C | -14 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm | 200 mΩ |
| Total Gate Charge (Qg) | 38.7 nC (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissition (PD) at TC=25C | 79 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) | — |
| Rentang Suhu Kerja | -55C to +150C (TJ) | — |
| Paket | D2PAK (TO-263-3) | TO-220AB (through-hole) |
| Tipe Mounting | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Technology | HEXFET (Planar DMOS) | — |
| Avalanche Rated | [DATA_NEEDED: EAS rating] | — |
| Continuous Drain Current (ID) at TC=25°C | — | -14 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typ | — | 38.7 nC |
| Maximum Power Dissition at TC=25°C | — | 79 W |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Mounting Screw Torque (max) | — | [DATA_NEEDED: maximum torque] |
| Avalanche Rating | — | Repetitive avalanche rated |
| dv/dt Rating | — | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS compliant |