IRF9530NSTRLPBF vs IRF9530NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9530NSTRLPBF sa pamamagitan ng Infineon at IRF9530NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF9530NSTRLPBF IRF9530NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) at TC=25C -14 A —
On-Resistance RDS(on) max @ VGS=-10V 200 mOhm 200 mΩ
Total Gate Charge (Qg) 38.7 nC (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) range] —
Power Dissition (PD) at TC=25C 79 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Thermal Resistance Theta_JC 1.5 C/W (typ) —
Hanay ng Temperature na Operasyon -55C to +150C (TJ) —
Packhaging D2PAK (TO-263-3) TO-220AB (through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Lead-Free / RoHS Yes (Pb-free suffix) —
Technology HEXFET (Planar DMOS) —
Avalanche Rated [DATA_NEEDED: EAS rating] —
Continuous Drain Current (ID) at TC=25°C — -14 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ — 38.7 nC
Maximum Power Dissition at TC=25°C — 79 W
Temperature ng Junction na Operasyon — -55°C to +175°C
Mounting Screw Torque (max) — [DATA_NEEDED: maximum torque]
Avalanche Rating — Repetitive avalanche rated
dv/dt Rating — Dynamic dV/dt rated
Lead-Free / RoHS Status — Lead-Free (PBF suffix), RoHS compliant

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