IRFB52N15DPBF vs IRFS52N15DPBF Perbandingan

Perbandingan bersamaan detil IRFB52N15DPBF dari Infineon dan IRFS52N15DPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB52N15DPBF IRFS52N15DPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (V(BR)DSS) 150 V —
Continuous Drain Current (ID) at TC=25C 51 A —
Pulsed Drain Current (IDM) 204 A [DATA_NEEDED: IDM]
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V —
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Power Dissipation (PD) at TC=25C 230 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Suhu Hubung Kerja -55 C to +175 C -55C to +175C
Package Type TO-220AB (through-hole) —
Polarity / Channel Type N-Channel Enhancement Mode —
Technology HEXFET (vertical DMOS, hexagonal cell) HEXFET (Planar Cell)
Tipe Mounting Through Hole Surface Mount
Status RoHS Compliant Compliant
Lead-Free Finish Yes (Pb-free PBF suffix) —
Qualification Standard Industrial market (per IR/Infineon) JEDEC
FET Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) @ TC=25C — 51 A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
RDS(on) max @ VGS=10V — 32 mOhm
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Power Dissipation (PD) @ TA=25C — 3.8 W
Power Dissipation (PD) @ TC=25C — 230 W
Paket — D2PAK (TO-263) Surface Mount
Level MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon