IRFB52N15DPBF vs IRFS52N15DPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB52N15DPBF tarafından Infineon ve IRFS52N15DPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB52N15DPBF IRFS52N15DPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Drain-Source Voltage (V(BR)DSS) 150 V —
Continuous Drain Current (ID) at TC=25C 51 A —
Pulsed Drain Current (IDM) 204 A [DATA_NEEDED: IDM]
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V —
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Power Dissipation (PD) at TC=25C 230 W —
Power Dissipation (PD) at TA=25C 3.8 W —
İşletim Jant Sıcaklığı -55 C to +175 C -55C to +175C
Package Type TO-220AB (through-hole) —
Polarity / Channel Type N-Channel Enhancement Mode —
Technology HEXFET (vertical DMOS, hexagonal cell) HEXFET (Planar Cell)
Montaj Türü Through Hole Surface Mount
RoHS Durumu Compliant Compliant
Lead-Free Finish Yes (Pb-free PBF suffix) —
Qualification Standard Industrial market (per IR/Infineon) JEDEC
FET Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) @ TC=25C — 51 A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
RDS(on) max @ VGS=10V — 32 mOhm
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Power Dissipation (PD) @ TA=25C — 3.8 W
Power Dissipation (PD) @ TC=25C — 230 W
Paket — D2PAK (TO-263) Surface Mount
MSL Seviyesi — 1 (per JEDEC J-STD-020)
Lead-Free — Yes

Dökümanlar & Kaynaklar

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