IRFB52N15DPBF vs IRFS52N15DPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB52N15DPBF sa pamamagitan ng Infineon at IRFS52N15DPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB52N15DPBF | IRFS52N15DPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55C to +175C |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar Cell) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | — |
| Qualification Standard | Industrial market (per IR/Infineon) | JEDEC |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) @ TC=25C | — | 51 A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=10V | — | 32 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Power Dissipation (PD) @ TA=25C | — | 3.8 W |
| Power Dissipation (PD) @ TC=25C | — | 230 W |
| Packhaging | — | D2PAK (TO-263) Surface Mount |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |