IRFB7534PBF vs FDP030N06 Perbandingan

Perbandingan bersamaan detil IRFB7534PBF dari Infineon dan FDP030N06 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB7534PBF FDP030N06
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRFB7534PBF —
Technology StrongIRFET™ (planar N-channel) PowerTrench (Trench)
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Tc=25C 195 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Power Dissipation (PD) at Tc=25C 294 W —
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm —
Gate Threshold Voltage VGS(th) 3.7 V (typ) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Avalanche Energy Rated Yes —
Paket TO-220AB TO-220-3 (3+Tab)
Tipe Mounting Through Hole Through Hole
Rentang Suhu Kerja -55C to +175C —
Status RoHS Compliant (PbF suffix) [DATA_NEEDED: RoHS compliance status]
Level MSL MSL1 (unlimited floor life) —
FET Type — N-Channel MOSFET
Drain to Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ 25C — 120 A (Tc)
Continuous Drain Current (datasheet rating) — 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs — 3.2 mOhm
RDS(on) Typ — 2.6 mOhm
Power Dissipation (Tc) — 231 W (Tc)
Gate Drive Type — Standard level gate drive
Switching Speed — Fast
Gate Input Resistance — Low gate input resistance (low gate charge)
Avalanche Test — 100% avalanche tested
Packing — Tube
Typical Applications — Power supply, switching applications

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