IRFB7534PBF vs FDP030N06 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB7534PBF sa pamamagitan ng Infineon at FDP030N06 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB7534PBF FDP030N06
Brand Infineon onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRFB7534PBF —
Technology StrongIRFET™ (planar N-channel) PowerTrench (Trench)
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Tc=25C 195 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Power Dissipation (PD) at Tc=25C 294 W —
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm —
Gate Threshold Voltage VGS(th) 3.7 V (typ) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Avalanche Energy Rated Yes —
Packhaging TO-220AB TO-220-3 (3+Tab)
Uri ng Pagpapasok Through Hole Through Hole
Hanay ng Temperature na Operasyon -55C to +175C —
Tindminan RoHS Compliant (PbF suffix) [DATA_NEEDED: RoHS compliance status]
Level ng MSL MSL1 (unlimited floor life) —
FET Type — N-Channel MOSFET
Drain to Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ 25C — 120 A (Tc)
Continuous Drain Current (datasheet rating) — 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs — 3.2 mOhm
RDS(on) Typ — 2.6 mOhm
Power Dissipation (Tc) — 231 W (Tc)
Gate Drive Type — Standard level gate drive
Switching Speed — Fast
Gate Input Resistance — Low gate input resistance (low gate charge)
Avalanche Test — 100% avalanche tested
Packing — Tube
Typical Applications — Power supply, switching applications

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