IRFB7534PBF vs FDP030N06 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7534PBF disebabkan oleh Infineon dan FDP030N06 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB7534PBF FDP030N06
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRFB7534PBF —
Technology StrongIRFET™ (planar N-channel) PowerTrench (Trench)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Tc=25C 195 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Power Dissipation (PD) at Tc=25C 294 W —
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm —
Gate Threshold Voltage VGS(th) 3.7 V (typ) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Avalanche Energy Rated Yes —
Kemasan TO-220AB TO-220-3 (3+Tab)
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi -55C to +175C —
Status RoHS Compliant (PbF suffix) [DATA_NEEDED: RoHS compliance status]
Aras MSL MSL1 (unlimited floor life) —
FET Type — N-Channel MOSFET
Drain to Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ 25C — 120 A (Tc)
Continuous Drain Current (datasheet rating) — 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs — 3.2 mOhm
RDS(on) Typ — 2.6 mOhm
Power Dissipation (Tc) — 231 W (Tc)
Gate Drive Type — Standard level gate drive
Switching Speed — Fast
Gate Input Resistance — Low gate input resistance (low gate charge)
Avalanche Test — 100% avalanche tested
Packing — Tube
Typical Applications — Power supply, switching applications

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