IRFL4315TRPBF vs BSP295H6327XTSA1 Perbandingan
Perbandingan bersamaan detil IRFL4315TRPBF dari Infineon dan BSP295H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFL4315TRPBF | BSP295H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Drain-to-Source Voltage (V_DS) | 150 V | — |
| Continuous Drain Current (I_D) at 25°C | 2.6 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: I_DM rating] | — |
| R_DS(on) max at V_GS=10V | 185 mΩ | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typ/min/max] | — |
| Total Gate Charge Q_G | 12 nC | — |
| Gate-to-Source Voltage V_GS | ±30 V (max) | — |
| Continuous Source Current (Body Diode I_S) | 1.6 A | — |
| di/dt (Body Diode) | 230 A/μs | — |
| Power Dissipation (Ta) | 2.8 W | — |
| Rentang Suhu Kerja | [DATA_NEEDED: T_J min/max] | -55 °C to +150 °C |
| Paket | SOT-223 | PG-SOT223-4 (3 leads + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ (planar/HEXFET-style) | Planar N-channel MOSFET |
| Qualification Standard | Industrial market (per Infineon datasheet) | — |
| Lead-Free / RoHS | Lead-free (PBF suffix); RoHS compliant | — |
| Packaging | Tape & Reel (TRPBF) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | — | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | — | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | — | 300 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Qualification | — | AEC-Q101 (Automotive) |
| Status RoHS | — | Compliant |
| Tape and Reel Packing Code | — | H6327 (7-inch reel) |
| Channel Mode | — | Enhancement |
| Drain Tab Connection | — | Pin 4 (tab) |