IRFL4315TRPBF vs BSP295H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFL4315TRPBF disebabkan oleh Infineon dan BSP295H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFL4315TRPBF BSP295H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET —
Drain-to-Source Voltage (V_DS) 150 V —
Continuous Drain Current (I_D) at 25°C 2.6 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: I_DM rating] —
R_DS(on) max at V_GS=10V 185 mΩ —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typ/min/max] —
Total Gate Charge Q_G 12 nC —
Gate-to-Source Voltage V_GS ±30 V (max) —
Continuous Source Current (Body Diode I_S) 1.6 A —
di/dt (Body Diode) 230 A/μs —
Power Dissipation (Ta) 2.8 W —
Gambaran Suhu Operasi [DATA_NEEDED: T_J min/max] -55 °C to +150 °C
Kemasan SOT-223 PG-SOT223-4 (3 leads + tab)
Jenis Pemasangan Surface Mount Surface Mount
Technology IR MOSFET™ (planar/HEXFET-style) Planar N-channel MOSFET
Qualification Standard Industrial market (per Infineon datasheet) —
Lead-Free / RoHS Lead-free (PBF suffix); RoHS compliant —
Packaging Tape & Reel (TRPBF) —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Ta=25 °C — 1.8 A
Power Dissipation (PD) at Ta=25 °C — 1.8 W
Drain-Source On-Resistance RDS(on) max — 300 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Qualification — AEC-Q101 (Automotive)
Status RoHS — Compliant
Tape and Reel Packing Code — H6327 (7-inch reel)
Channel Mode — Enhancement
Drain Tab Connection — Pin 4 (tab)

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