IRFR1205TRPBF vs BSP88H6327XTSA1 Perbandingan

Perbandingan bersamaan detil IRFR1205TRPBF dari Infineon dan BSP88H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR1205TRPBF BSP88H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) SIPMOS (planar enhancement mode)
Drain-Source Voltage (VDS) 55 V 240 V
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) min/typ/max]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C 107 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) PG-SOT223-4 (SOT-223-3)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
Suhu Kerja — -55 C to +150 C
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
Level MSL — [DATA_NEEDED: MSL level]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

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