IRFR1205TRPBF vs BSP88H6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR1205TRPBF disebabkan oleh Infineon dan BSP88H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR1205TRPBF | BSP88H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, 5th generation) | SIPMOS (planar enhancement mode) |
| Drain-Source Voltage (VDS) | 55 V | 240 V |
| Continuous Drain Current (ID) at TC=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK) | PG-SOT223-4 (SOT-223-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (PBF suffix = lead-free) | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 350 mA at Ta=25 C |
| Power Dissipation (PD) | — | 1.8 W at Ta=25 C |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Suhu Operasi | — | -55 C to +150 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |