IRFR1205TRPBF vs BSP88H6327XTSA1 比較

詳細並排比較 IRFR1205TRPBF 由 Infineon 與 BSP88H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 ✓ 啟用中

規格比較

參數 IRFR1205TRPBF BSP88H6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) SIPMOS (planar enhancement mode)
Drain-Source Voltage (VDS) 55 V 240 V
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) min/typ/max]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C 107 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) PG-SOT223-4 (SOT-223-3)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
工作溫度 — -55 C to +150 C
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL 等級 — [DATA_NEEDED: MSL level]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

資料表與資源

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