IRFR220NPBF vs IRFR2405TRLPBF Perbandingan
Perbandingan bersamaan detil IRFR220NPBF dari Infineon dan IRFR2405TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR220NPBF | IRFR2405TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket / Case | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET, 7th generation) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +175 C (junction) |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Avalanche Energy Rated | Yes (per datasheet characterization) | Yes (HEXFET ruggedized design) |
| Jumlah Pin | 3 (Gate, Drain, Source) plus tab | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| Pulsed Drain Current (IDM) | — | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Paket | — | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Packaging | — | Tape & Reel (TR) |