IRFR220NPBF vs IRFR2405TRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFR220NPBF tarafından Infineon ve IRFR2405TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFR220NPBF | IRFR2405TRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Paket / Kas | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET, 7th generation) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55 C to +175 C (junction) |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Avalanche Energy Rated | Yes (per datasheet characterization) | Yes (HEXFET ruggedized design) |
| Pin Sayısı | 3 (Gate, Drain, Source) plus tab | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | — |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| Pulsed Drain Current (IDM) | — | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Paket | — | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Packaging | — | Tape & Reel (TR) |