IRFR3504ZTRPBF vs IRFR3607TRPBF Perbandingan
Perbandingan bersamaan detil IRFR3504ZTRPBF dari Infineon dan IRFR3607TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR3504ZTRPBF | IRFR3607TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, TC=25°C) | 42 A | — |
| Continuous Drain Current (ID, TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 1.8 V (logic-level) | — |
| Total Gate Charge (Qg) typ | 30 nC | — |
| Power Dissipation (PD) at TC=25°C | 90 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Paket | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (N-Channel Silicon MOSFET) | IR HEXFET (planar DMOS) |
| Status RoHS | Compliant | — |
| Level MSL | 1 (unlimited) | — |
| Avalanche Rated | Yes (improved repetitive avalanche rating) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc) | — | 56 A |
| Calculated Die Drain Current | — | 80 A |
| On-State Resistance (RDS(on)) | — | 9 mOhm @ VGS=10V, ID=46A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 56 nC |
| Gate-to-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD, Tc) | — | 140 W |
| Thermal Resistance (RthJC) | — | 1.0 C/W |
| Rentang Suhu Kerja | — | -55C to +175C (TJ max 175C per datasheet convention) |
| Avalanche SOA | — | Fully characterized |
| RoHS / Lead-Free | — | Compliant / Pb-free (PBF suffix, JESD-609 e3) |